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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550SS TRANSISTORPNP (c) TO 92 FEATURES Power dissipation PCM : Collector current ICM: -1.5 A Collector-base voltage V(BR)CBO : - 40V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=-1V , IC=-800 mA IC=-800 m,IB=-80 mA IC=-800mA,IB=-80 mA VCE=-10 V, IC=-50mA Transition frequency 40 -0.5 -1.2 V V 1W Tamb=25ae(c) 1.EMITTER 2. COLLECTOR 3. BASE 123 unless Test otherwise MIN -40 -25 -6 specified(c) TYP MAX UNIT V V V -0.1 -0.1 -0.1 |I A |I A | A conditions Ic= -100 |I IE=0 A IC= -0.1 IE= -100 VCB= -40 VCE= -20 VEB= -5 mA , IB=0 |I A IC=0 V, V, V, IE=0 IE=0 IC=0 VCE= -1V , IC=-100 mA 85 300 fT f =30 MHz 100 MHz CLASSIFICATION OF h FE(1) Rank Range B 85-160 C 120-200 D 160-300 TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b |O e e1 Symbol A A1 b c D D1 E e e1 L O Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169 C |
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